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Contact end resistance measurement

「Contact end resistance measurement」文章包含有:「Contactendresistanceteststructureappliedfor...」、「Determiningspecificcontactresistivityfromcontactend...」、「ContactresistanceandTLMmeasurements」、「UncoveringtheDifferentComponentsofContact...」、「Contactresistance」、「UncoveringtheDifferentComponentsofContactResistance...」、「Analyticalmeasurementsofcontactresistivityintwo」、「Validationofmethodologytodeterminethecontact...」

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CTLM measurement
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Contact end resistance test structure applied for ...
Contact end resistance test structure applied for ...

https://www.sciencedirect.com

For a nanocontact the contact resistance is given by:(2) R c = r NO r c coth r NO r c L where rNO is the resistance per unit length of the nanoobject (in Ω/m) ...

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Determining specific contact resistivity from contact end ...
Determining specific contact resistivity from contact end ...

https://ieeexplore.ieee.org

Abstract: A method is described to determine specific contact resistivity from contact end resistance measurements using a transmission line model.

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Contact resistance and TLM measurements
Contact resistance and TLM measurements

https://gtuttle.net

In measuring resistance with the four-point-probe or van der Pauw methods, we used 4 contacts (2 for current, 2 for voltage) to determine the sheet resistance ...

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Uncovering the Different Components of Contact ...
Uncovering the Different Components of Contact ...

https://onlinelibrary.wiley.co

2.1 TLM and Contact-End Resistance Measurements. An important parameter of contacts with “lateral” current flow is the average length which ...

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Contact resistance
Contact resistance

https://en.wikipedia.org

Contact resistance values are typically small (in the microohm to milliohm range). Contact resistance can cause significant voltage drops and heating in ...

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Uncovering the Different Components of Contact Resistance ...
Uncovering the Different Components of Contact Resistance ...

https://poplab.stanford.edu

The measured contact-end resistance is then Rce = V23/I12. For device fabrication we grew monolayer (1L) MoS2 by chemical vapor deposition[33] (CVD) on SiO2 ( ...

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Analytical measurements of contact resistivity in two
Analytical measurements of contact resistivity in two

https://iopscience.iop.org

The transfer length method (TLM) is introduced by Shockley [3] to measure the contact resistance in semiconductor devices, and it is very ...

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Validation of methodology to determine the contact ...
Validation of methodology to determine the contact ...

https://www.sciencedirect.com

In contrast to the front side, the contact resistance at the end side can be directly measured. Hence, it can never be a negative value.